Influence of electrolyte selection on performance of tantalum anodic oxide memristors

Anodic memristors obtained by electrochemical anodization of Ta in phosphate, borate and citrate buffer solutions are studied. Memristive behaviour is demonstrated electrical switching between high low conductive states. The endurance retention devices analysed. use phosphate leads to 4 levels the highest ratio resistive All studied oxides stoichiometric Ta2O5 only P detected inside anodic memristors. improved memristive characteristics anodized attributed an increase O vacancies due presence oxyphosphate, which believed mediate spatial pinning filaments positions during read/write. show stability, enhanced that combined with their active layer fabrication cost makes them ideal candidates for industrial implementation.